1.3-um optoelectronic devices on GaAs using group III-nitride-arsenides

Sylvia G. Spruytte; Mark A. Wistey; Michael C. Larson; Christopher W. Coldren; Henry E. Garrett; James S. Harris Jr.

doi:10.1117/12.424811

4 May 2001 1.3-μm optoelectronic devices on GaAs using group III-nitride-arsenides

Sylvia G. Spruytte, Mark A. Wistey, Michael C. Larson, Christopher W. Coldren, Henry E. Garrett, James S. Harris Jr.

Proceedings Volume 4286, Vertical-Cavity Surface-Emitting Lasers V; (2001) https://doi.org/10.1117/12.424811
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Group III-Nitride-Arsenides are promising materials for 1.3 micron opto-electronic devices grown on GaAs substrates, allowing AlAs/GaAs distributed Bragg reflector (DBR) mirrors and integration with GaAs electronics. Nitrogen decreases the GaAs bandgap dramatically, and the smaller GaN lattice constant results in less strain in GaInNAs compared to InGaAs. However, the anneal necessary to achieve device quality material shifts the emission peak to shorter wavelengths. Secondary ion mass spectroscopy (SIMS) depth profiling on GaInNAs quantum wells shows that nitrogen diffusion exceeds indium diffusion during anneal. We have demonstrated broad-area lasers, pulsed lasers, and CW VCSELs. However, due to nitrogen out-diffusion from the QWs, the operating wavelength of these initial devices was shorter than 1.23µm. Subsequent use of GaNAs barriers surrounding the QWs reduced the shift of the emission peak during anneal, as the GaAsN diffused nitrogen into the QW. This also resulted in longer wavelength emission due to decreased electron confinement energy and compensted overall strain. This new active region resulted in devices emitting at 1.3 micron. The new design also improved laser characteristic temperature T0 from 105K to 146K for similar devices.

Citation Download Citation

Sylvia G. Spruytte, Mark A. Wistey, Michael C. Larson, Christopher W. Coldren, Henry E. Garrett, and James S. Harris Jr. "1.3-μm optoelectronic devices on GaAs using group III-nitride-arsenides", Proc. SPIE 4286, Vertical-Cavity Surface-Emitting Lasers V, (4 May 2001); https://doi.org/10.1117/12.424811

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