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6 June 2001 High-performance quantum cascade lasers grown by gas-source molecular beam epitaxy
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Proceedings Volume 4287, In-Plane Semiconductor Lasers V; (2001) https://doi.org/10.1117/12.429791
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
Recent improvements in quantum cascade laser technology have led to a number of very impressive results. This paper is a brief summary of the technological development and state-of- the-art performance of quantum cascade lasers produced at the Center for Quantum Devices. Laser design will be discussed, as well as experimental details of device fabrication. Room temperature QCL operation has been reported for lasers emitting between 5 - 11 micrometers , with 9 - 11 micrometers lasers operating up to 425 K. We also demonstrate record room temperature peak output powers at 9 and 11 micrometers (2.5 W and 1 W respectively) as well as record low 80 K threshold current densities (250 A/cm2) for some laser designs. Finally, some of the current limitations to laser efficiency are mentioned, as well as a means to combat them.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manijeh Razeghi, Steven Slivken, Abbes Tahraoui, and Anthony W. Matlis "High-performance quantum cascade lasers grown by gas-source molecular beam epitaxy", Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); https://doi.org/10.1117/12.429791
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