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6 June 2001 Mid-IR interband cascade lasers: progress toward high performance
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Proceedings Volume 4287, In-Plane Semiconductor Lasers V; (2001)
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Type-II interband cascade (IC) lasers take advantage of the broken-gap alignment in type-II quantum wells to reuse electrons for sequential photon emissions from serially connected active regions. Here, we review our recent progress in InAs/GaInSb type-II IC lasers at emission wavelengths of 3.6 - 4 micrometers . These semiconductor lasers have exhibited significantly higher differential quantum efficiencies and peak powers than previously reported. Low threshold current densities (e.g., approximately 56 A/cm2 at 80 K) and power efficiency exceeding 14% were observed from mesa-stripe lasers when operated in cw mode. Also, these lasers were able to operate at temperatures up to approximately 252 K in pulsed mode and approximately 142 K in cw mode. We observed slope efficiencies exceeding 1 W/A/facet, corresponding to a differential external quantum efficiency exceeding 600%, from devices at temperatures above 80 K. A peak output power of approximately 6 W/facet was observed from an IC laser at 80 K.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John D. Bruno, Rui Q. Yang, John L. Bradshaw, John T. Pham, and Donald E. Wortman "Mid-IR interband cascade lasers: progress toward high performance", Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001);


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