Improvement of low-temperature sensing realized with a superlattice infrared photodetector

Chun-Chi Chen; Mao-Chieh Hsu; Wen-Hsing Hsieh; Chieh-Hsiung Kuan

doi:10.1117/12.429425

12 June 2001 Improvement of low-temperature sensing realized with a superlattice infrared photodetector

Chun-Chi Chen, Mao-Chieh Hsu, Wen-Hsing Hsieh, Chieh-Hsiung Kuan

Proceedings Volume 4288, Photodetectors: Materials and Devices VI; (2001) https://doi.org/10.1117/12.429425
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

It is found that the temperature accuracy (dT), measured by the photocurrent ratio of two linearly independent spectral responses, depends on two factors. One is the dissimilarity of the spectral responses determined primarily by the separation of the long and short wavelength peaks, and is not related with their responsivity magnitude. The other is dominated between the smaller S/N for the two measured photocurrents. The dissimilarity can be improved by moving the short wavelength peak to an even shorter one. However, this decreases the signal magnitude measured by the shorter wavelength peak at low target temperature, and results in the degradation of the S/N and (Delta) T. Therefore, a superlattice structure with absorption peaks at 6.7 micrometers and 9.7 micrometers was designed, and the wavelength separation is less than the conventional two-color QWIP. The spectral response of the detector is voltage-tunable through a current blocking layer that acts as an energy filter for the photo-excited carriers. The measured peak detectivity of this detector is 3.7 X 10⁹ cmHz^0.5/W (9.7 micrometers ) at -0.5 V and 2.2 X 10¹⁰ cmHz^0.5/W (6.7 micrometers ) at -0.1 V at 45K. Our detector is capable of measuring target temperatures ranging from 300K to 1200K and higher. The estimated (Delta) T is 0.8K for 300K target, and 0.17K for 1200K target.

Citation Download Citation

Chun-Chi Chen, Mao-Chieh Hsu, Wen-Hsing Hsieh, and Chieh-Hsiung Kuan "Improvement of low-temperature sensing realized with a superlattice infrared photodetector", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); https://doi.org/10.1117/12.429425

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available