Silicon infrared focal plane arrays

Masafumi Kimata; Hirofumi Yagi; Masashi Ueno; Junji Nakanishi; Tomohiro Ishikawa; Yoshiyuki Nakaki; Makoto Kawai; Kazuyo Endo; Yasuhiro Kosasayama; Yasuaki Ohota; Takashi Sugino; Takanori Sone

doi:10.1117/12.429416

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12 June 2001 Silicon infrared focal plane arrays

Masafumi Kimata, Hirofumi Yagi, Masashi Ueno, Junji Nakanishi, Tomohiro Ishikawa, Yoshiyuki Nakaki, Makoto Kawai, Kazuyo Endo, Yasuhiro Kosasayama, Yasuaki Ohota, Takashi Sugino, Takanori Sone

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Proceedings Volume 4288, Photodetectors: Materials and Devices VI; (2001) https://doi.org/10.1117/12.429416
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Using Si VLSI technology, we can fabricate various kinds of infrared focal plane arrays (FPAs) which cover spectral bands from short wavelength infrared to long wavelength infrared. The Si-based technology offers many attractive features, such as monolithic integration, high uniformity, low noise, low cost, and high productivity. We have been developing Si-based infrared FPAs for more than 20 years and have verified their usefulness.

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Masafumi Kimata, Hirofumi Yagi, Masashi Ueno, Junji Nakanishi, Tomohiro Ishikawa, Yoshiyuki Nakaki, Makoto Kawai, Kazuyo Endo, Yasuhiro Kosasayama, Yasuaki Ohota, Takashi Sugino, and Takanori Sone "Silicon infrared focal plane arrays", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); https://doi.org/10.1117/12.429416

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