Paper
30 May 2001 Integrated high-speed GaAs MSM photodetector and polyimide channel waveguide array for board-level data communication
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Abstract
A demonstration of hybrid integration of a 1 X 12 metal- semiconductor-metal (MSM) photo-detector array and polyimide channel waveguides via 45 degree(s) total-internal-reflection micro-coupler is reported here. MSM photo-detector array was fabricated on a semi-insulated GaAs wafer. The two-layer polyimide waveguide array was constructed using Ultradel 9120D for core and Ultradel 9020 for lower cladding layer. The photodetectors are integrated to operate in the conventional vertical illumination mode. We have measured the external quantum-efficiency and 3 dB bandwidth of the integrated MSM photo-detectors to be 0.4 A/W and 2.648 GHz, respectively. The aggregate 3 dB bandwidth of the 12-channel integrated system is 32 GHz.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lei Lin, Yujie Liu, Chulchae Choi, Bipin Bihari, and Ray T. Chen "Integrated high-speed GaAs MSM photodetector and polyimide channel waveguide array for board-level data communication", Proc. SPIE 4292, Optoelectronic Interconnects VIII, (30 May 2001); https://doi.org/10.1117/12.428029
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KEYWORDS
Waveguides

Gallium arsenide

Channel waveguides

Optical interconnects

Photodetectors

Pulsed laser operation

Sensors

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