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18 May 2001 Materials processing technology for the integration of effective Ge p-i-n photodetectors on Si for Si microphotonics
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Proceedings Volume 4293, Silicon-based and Hybrid Optoelectronics III; (2001) https://doi.org/10.1117/12.426929
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
We present a technology for the integration of high performance near-infrared Ge P-I-N photodetectors on Si for Si microphotonics. High quality Ge epilayers were grown on Si by a two-step ultrahigh-vacuum / chemical-vapor-deposition (UHV/CVD) process. Two-step UHV/CVD allows the epitaxial growth of Ge on Si without islanding. Threading-dislocations in Ge epilayers were reduced by cyclic thermal annealing. The reduction of threading-dislocations can be understood in terms of thermal stress induced dislocation glide and reactions. We found that sessile threading-dislocations are not permanent and can be removed.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hsin-Chiao Luan, Meghan A. Kerner, Lionel C. Kimerling, Lorenzo Colace, Gianlorenzo Masini, and Gaetano Assanto "Materials processing technology for the integration of effective Ge p-i-n photodetectors on Si for Si microphotonics", Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, (18 May 2001); https://doi.org/10.1117/12.426929
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