Paper
18 May 2001 Peculiarities of heterostructures made on the base of porous silicon and their physical properties
Liubomyr S. Monastyrskii, Roman M. Kovtun, Petro P. Parandiy, Sergii O. Kostukevich
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Abstract
Photoemissive heterostructures solid films of polymer PMA, Al2O3, ZnS on porous silicon surfaces were investigated. Photosensitive and tenzosensitive heterostructures on the base of porous silicon were created by method of optical contact of GaSe plates and heterostructures porous silicon silicon substrate. Photoemission, photosensitive and tenzosensitive properties of heterostructures based on porous silicon were investigated.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Liubomyr S. Monastyrskii, Roman M. Kovtun, Petro P. Parandiy, and Sergii O. Kostukevich "Peculiarities of heterostructures made on the base of porous silicon and their physical properties", Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, (18 May 2001); https://doi.org/10.1117/12.426936
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KEYWORDS
Silicon

Heterojunctions

Gases

Luminescence

Zinc

Solar energy

Solids

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