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18 May 2001 Polycrystalline Ge detectors integrated on SOI waveguide: device modeling and experimental results
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Proceedings Volume 4293, Silicon-based and Hybrid Optoelectronics III; (2001) https://doi.org/10.1117/12.426931
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
Integration of near infrared (NIR) photodetectors on a silicon substrate is a key step for the fabrication of an all silicon based NIR transceiver. To this extent, polycrystalline germanium (poly-Ge) technology is attractive due to the low deposition temperature and cost. Poly-Ge detectors demonstrated broad response, covering the whole NIR spectrum to 1.55 micron, fast, subnanosecond, speed and excellent versatility. In this work we present our recent results on the integration of a poly-Ge photodetector on a SOI silicon waveguide. The use of a waveguide for light in-coupling is appealing for telecom applications where signal is transported on an optical fibre, but, at the same time, it allows to increase detector responsivity. In fact, in this device the light is absorbed into the thin sensitive layer of the poly-Ge/Si heterojunction in a distributed way, during propagation. This releases the strong constraint of the absorption length being smaller than photocarrier collection length typical of normal incidence photodetectors. In the paper, both design issues and experimental results are reported.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gianlorenzo Masini, Lorenzo Colace, and Gaetano Assanto "Polycrystalline Ge detectors integrated on SOI waveguide: device modeling and experimental results", Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, (18 May 2001); https://doi.org/10.1117/12.426931
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