Paper
30 April 2001 Excimer laser annealing system for AMLCDs: a long laser pulse for high-performance, uniform, and stable TFT
Christophe Prat, Dorian Zahorski, Youri Helen, Taieb Mohammed-Brahim, Olivier Bonnaud
Author Affiliations +
Proceedings Volume 4295, Flat Panel Display Technology and Display Metrology II; (2001) https://doi.org/10.1117/12.424884
Event: Photonics West 2001 - Electronic Imaging, 2001, San Jose, CA, United States
Abstract
The excimer-laser-based machine developed by SOPRA for the Low Temperature Poly Silicon (LTPS) exhibit unique characteristics described in the present paper. The machine consists in a laser source, an optical set-up to homogenize the beam and a motion stage. The laser source is able to deliver up to 20 J per pulse. A shot to shot stability currently better than 4 percent ensures a high reproducibility of the annealing. The pulse duration of 200 ns is also known to improve the process in terms of resulting Si grain size. Due to the high energy per pulse, a large surface of typically 18 cm2 is annealed at once. Recent studies pointed out the good reproducibility of the TFT made of Si annealed by mean of this system: a deviation of the mobility of only 7.6 percent has been obtained for several tens of TFT which average mobility is of 234 cm2/V.s. Performances of TFT can be improved by annealing the a-Si in controlled atmosphere. TFTs submitted to an electrical stress, exhibit a much better stability than that of TFTs obtained by Solid Phase Crystallization. The variation of the slope of the 'laser processed' TFTs is two to three times lower than that of 'SPC' TFTs.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christophe Prat, Dorian Zahorski, Youri Helen, Taieb Mohammed-Brahim, and Olivier Bonnaud "Excimer laser annealing system for AMLCDs: a long laser pulse for high-performance, uniform, and stable TFT", Proc. SPIE 4295, Flat Panel Display Technology and Display Metrology II, (30 April 2001); https://doi.org/10.1117/12.424884
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Cited by 7 scholarly publications.
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KEYWORDS
Annealing

Silicon

Pulsed laser operation

Amorphous silicon

Excimer lasers

Laser sources

Crystals

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