Numerical simulation of carbon reflection on silicon substrate in chemical vapor deposition method by molecular dynamics

Tomoo Kayaba; Y. Hamada; M. Saka

doi:10.1117/12.429598

13 June 2001 Numerical simulation of carbon reflection on silicon substrate in chemical vapor deposition method by molecular dynamics

Tomoo Kayaba, Y. Hamada, M. Saka

Author Affiliations +

Proceedings Volume 4317, Second International Conference on Experimental Mechanics; (2001) https://doi.org/10.1117/12.429598
Event: Second International Conference on Experimental Mechanics, 2000, Singapore, Singapore

Abstract

In order to solve fundamental process of the nucleation of the diamond, molecular dynamics simulation of the reflection of the carbon atom is conducted. Only one carbon atom is used for the simulation aiming to show fundamental process of the nucleation. The reflection phenomenon affected by the velocity and angle of incidence of the carbon atom is presented here. The position of carbon adsorption is discussed. Finally, it is shown that the reflection phenomenon is independent of the velocity and the angle of incidence.

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Tomoo Kayaba, Y. Hamada, and M. Saka "Numerical simulation of carbon reflection on silicon substrate in chemical vapor deposition method by molecular dynamics", Proc. SPIE 4317, Second International Conference on Experimental Mechanics, (13 June 2001); https://doi.org/10.1117/12.429598

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