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The Cd1-xZnxSe films, deposited from solution, differ by high photosensitivity in visible and near IR region of spectrum. In present paper are called the results of induced impurity photoconductivity (IIP) of Ccd1-xANxSe (0 less than or equal to x less than or equal to 0.5) films in region of 2.5-3.0micrometers . The Cd1-xZnxSe films are obtained on glass-ceramic substrates by chemical deposition from aqueous solution, containing cadmium and zinc salts, and thiourea. The films are subjected to heat-treatment in air at temperatures 400-500 degree(s)C for 0-30 min. A quasi-linear spectrum of IIR adjoins to band according to impurity band from the side of high energy. At the spectrum of IIP have been observed narrow bands, the half-wide is 0.03-0.04 eV. With increasing the levels of primary photoexcitation the deformation of IIP spectrum to region of high energy, which appears in bands spectrum maximum. The value of violet shear is equal to (Delta) E=0.05 eV. The values of these phenomena are determined by nature of multi- levels associate, which are related to the optical activated sticking centers of electrons. At the same time the intensity of wide IIP band (hvo=0.3eV, in a low- temperature region) weak dependancies on temperature, on which testily band-impurity character of ionization of according ionizated donor centers. The isolated donors characterized by level of Ec=0.29-0.32 eV and cross- section of capture (Sn=(2-4)x1017 m2). Their participation in called associated provides appearance of systems of optical active electron states, entered in energy range of 0.3-0.6 eV, having conditioned by high-temperature stable photosensitivity of Cd1-xZnxSe films in IR-region. It is shown that, the studied Cd1-xZnxSe films could be in use as an ordinary and cheap elements of memory of optical records, transformers of visible light to infra-red (IR) radiation.
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