Paper
28 November 2000 Structural perfection diagnostics of narrow-gap photosensitive semiconductor junctions by electron diffraction
Alexandr D. Britov, Alexander I. Dirochka, Pavel S. Serebrennikov, N. A. Suleimanov, A. S. Kononov, Igor P. Suprun
Author Affiliations +
Proceedings Volume 4340, 16th International Conference on Photoelectronics and Night Vision Devices; (2000) https://doi.org/10.1117/12.407740
Event: XVI International Conference on Photoelectronics and Night Vision Devices, 2000, Moscow, Russian Federation
Abstract
In the work are studied structural, electrical and optical properties of film heterojunctions p-Pb1-xSnxTe-n- PbTe obtained by condensation of molecular beams in vacuum approximately 10-6mm mercury pressure. It is determined that diffusion fringes intensity on diffraction patterns are different depending on thickness of films (d) and temperature of films growing (Tf). The intensity of diffusion fringes also depends on survey temperature (Ts). The correlation between intensity of diffusion fringes on electron diffraction patterns and photosensitivity of heterojunctions Pb1-xSnxTe-PbTe is found.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexandr D. Britov, Alexander I. Dirochka, Pavel S. Serebrennikov, N. A. Suleimanov, A. S. Kononov, and Igor P. Suprun "Structural perfection diagnostics of narrow-gap photosensitive semiconductor junctions by electron diffraction", Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); https://doi.org/10.1117/12.407740
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KEYWORDS
Diffusion

Diffraction

Heterojunctions

Diagnostics

Semiconductors

Molecular beams

Mercury

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