Suppression of the impact ionization by secondary carriers in avalanche photosensitive MIS-like structures

Timur M. Burbaev; Vadim A. Kurbatov; Nicolay E. Kurochkin; Vyacheslav A. Kholodnov; Zynaddyn Ya. Sadygov

doi:10.1117/12.407728

28 November 2000 Suppression of the impact ionization by secondary carriers in avalanche photosensitive MIS-like structures

Timur M. Burbaev, Vadim A. Kurbatov, Nicolay E. Kurochkin, Vyacheslav A. Kholodnov, Zynaddyn Ya. Sadygov

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Proceedings Volume 4340, 16th International Conference on Photoelectronics and Night Vision Devices; (2000) https://doi.org/10.1117/12.407728
Event: XVI International Conference on Photoelectronics and Night Vision Devices, 2000, Moscow, Russian Federation

Abstract

Noise and high-frequency characteristics of photosensitive avalanche MIS-type structures are studied. It is shown that their high-speed operation is substantially higher than that of silicon avalanche photodiodes. A theoretical analysis of high-frequency properties of avalanche photodiodes is carried out and the analytical expressions for the gain- bandwidth production are obtained. It is shown that this production is not a universal parameter for the MIS structure with a negative feedback, since for high amplification factors, the effective value of the relationship of the impact ionization coefficients by various types of charge carriers in such structures turns out to be essentially different than in avalanche photodiodes.

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Timur M. Burbaev, Vadim A. Kurbatov, Nicolay E. Kurochkin, Vyacheslav A. Kholodnov, and Zynaddyn Ya. Sadygov "Suppression of the impact ionization by secondary carriers in avalanche photosensitive MIS-like structures", Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); https://doi.org/10.1117/12.407728

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