Impact of positive ions and effect of lens aberrations in projection electron-beam systems

Bo Wu; Andrew R. Neureuther

doi:10.1117/12.436641

20 August 2001 Impact of positive ions and effect of lens aberrations in projection electron-beam systems

Bo Wu, Andrew R. Neureuther

Proceedings Volume 4343, Emerging Lithographic Technologies V; (2001) https://doi.org/10.1117/12.436641
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

The Berkeley Electron Beam Simulator (BEBS) has been used with positive particles and induced lens aberrations to diagnose and partially compensate beam blur at high current. Simulation shows up to a 24% spot size reduction at 30(mu) A beam current with positive ions introduced in the beam column. Results also show that a proper amount of lens aberration can partially cancel the aberration induced by the global space charge effect. Over a 30% beam blur reduction has been achieved at 30(mu) A beam current. A 30(mu) A simulation requires roughly one hour with ten 500MHz processors. Results are also reported for using BEBS with both positrons and electrons as a stochastic effect simulator. This enables the isolation of the stochastic coulomb interactions from the space charge effect in any beam configuration and the direct measurement of the stochastic beam blur. Our simulation shows that the stochastic blur scales proportionally to I^0.62, in comparison with Jansen's prediction of I^0.67, where I is the beam current.

Citation Download Citation

Bo Wu and Andrew R. Neureuther "Impact of positive ions and effect of lens aberrations in projection electron-beam systems", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); https://doi.org/10.1117/12.436641

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