New results in high-energy proximity x-ray lithography

Mumit Khan; Geng Han; Juan R. Maldonado; Franco Cerrina

doi:10.1117/12.436639

20 August 2001 New results in high-energy proximity x-ray lithography

Mumit Khan, Geng Han, Juan R. Maldonado, Franco Cerrina

Proceedings Volume 4343, Emerging Lithographic Technologies V; (2001) https://doi.org/10.1117/12.436639
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

We report some new results in the use of high energy radiation in proximity x-ray lithography for the 50 nm node. The higher energy of the incoming radiation, 2.6-2.7 KeV, has two primary benefits: (1) it reduces the diffraction and allows printing of higher resolution features, and (2) it increases the effective depth of exposure allowing larger gap setting; however, the absorption of these photons creates hot electrons, which redistributes the energy in the resist, thus creating a uniform blur that limits the resolution by reducing contrast. The impact of the energy redistribution needs to be investigated when increasing the energy of the radiation, and in considering the materials used in both the optics and the mask and resist combination.

Citation Download Citation

Mumit Khan, Geng Han, Juan R. Maldonado, and Franco Cerrina "New results in high-energy proximity x-ray lithography", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); https://doi.org/10.1117/12.436639

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