Electrical linewidth measurement for next-generation lithography

Jongwook Kye; Harry J. Levinson

doi:10.1117/12.436789

22 August 2001 Electrical linewidth measurement for next-generation lithography

Jongwook Kye, Harry J. Levinson

Proceedings Volume 4344, Metrology, Inspection, and Process Control for Microlithography XV; (2001) https://doi.org/10.1117/12.436789
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

In recent years electrical linewidth measurement (ELM) has become accepted as an efficient method to gather large amounts of linewidth data rapidly and accurately. However, there are offsets between electrical and SEM measurements. While these have not been a concern for large features, it is important to minimize the bias as the actual linewidth approaches the offset. The purpose of this paper is to demonstrate that ELM can be used to measure linewidths much smaller than 100nm. Our experiments show that out-diffusion and surface ion depletion are the primary sources of bias in electrical linewidth measurement. Silicon nitride capping layers before annealing are helpful to prevent out-diffusion.

Citation Download Citation

Jongwook Kye and Harry J. Levinson "Electrical linewidth measurement for next-generation lithography", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); https://doi.org/10.1117/12.436789

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