Haidinger interferometer for silicon wafer TTV measurement

Robert E. Parks; Lianzhen Shao; Angela D. Davies; Christopher J. Evans

doi:10.1117/12.436775

22 August 2001 Haidinger interferometer for silicon wafer TTV measurement

Robert E. Parks, Lianzhen Shao, Angela D. Davies, Christopher J. Evans

Proceedings Volume 4344, Metrology, Inspection, and Process Control for Microlithography XV; (2001) https://doi.org/10.1117/12.436775
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

We describe a novel, IR phase shifting Haidinger fringe interferometer for measuring the thickness, total thickness variation (TTV) and bow of silicon wafers. We show that by taking 3 interferograms of the wafer in different positions in the cavity it is possible to separate thickness, TTV and bow. We also show that bow has an effect on the measurement of TTV.

Citation Download Citation

Robert E. Parks, Lianzhen Shao, Angela D. Davies, and Christopher J. Evans "Haidinger interferometer for silicon wafer TTV measurement", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); https://doi.org/10.1117/12.436775

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