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22 August 2001 Method for prevention of unopened contact hole in dual-damascene process
Gyu-Ho Lyu, Chang-Hwan Kim, Suk-Joo Lee, Hee-Hong Yang, Dae-Yup Lee, Ji-Yong Yoo, Jeong-Woo Lee, Yoo-Hyon Kim, Jeong-Lim Nam, Woo-Sung Han
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Proceedings Volume 4344, Metrology, Inspection, and Process Control for Microlithography XV; (2001) https://doi.org/10.1117/12.436747
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States
Abstract
In spite of the advantages of low cost and resistance, dual damascene process has some problems. When contact holes are patterned within the trench patterns, the contact holes are frequently found to be unopen and are bent toward trench side wall (TSW). These cause CD variation and small depth of focus. We can explain this phenomenon in view of limited resolution of photoresist (PR) and the light reflected from the TSW. The deeper the trench depth is, the thicker the thickness of the photoresist for contact hole patterns is, which leads to decreased resolution. And the light reflected off the TSW makes the contact hole's profile bent toward TSW. This reflected light influences on both sides. One is helpful in defining the contact holes near the TSW, and the other causes CD variations according to distance between the contact holes and TSW. If the contact holes and trench patterns are exactly the same sizes, it is possible to decrease the CD variation and to prevent PR contact holes from unopening within the trench patterns. Also it is of help to improve resolution at the bottom of the PR.
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Gyu-Ho Lyu, Chang-Hwan Kim, Suk-Joo Lee, Hee-Hong Yang, Dae-Yup Lee, Ji-Yong Yoo, Jeong-Woo Lee, Yoo-Hyon Kim, Jeong-Lim Nam, and Woo-Sung Han "Method for prevention of unopened contact hole in dual-damascene process", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); https://doi.org/10.1117/12.436747
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KEYWORDS
Critical dimension metrology
Absorption
Photoresist materials
Deep ultraviolet
Photoresist processing
Etching
Resistance
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