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24 August 2001 Characterization of new aromatic polymers for 157-nm photoresist applications
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There is currently tremendous interest in developing 157nm photoresists for imaging applications at 100nm and below. Due to the high VUV absorbance of the polymers used in 248 and 193 photoresists new materials are being investigated for applications at 157nm. In this report the characterization of a number of partially fluorinated polymers based on aromatic backbones will be described. Data on the absorbance, dissolution properties, solvent retention and acid diffusion characteristics of these systems will be presented.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nicolette Fender, Phillip J. Brock, W. Chau, S. Bangsaruntip, Arpan P. Mahorowala, Gregory M. Wallraff, William D. Hinsberg, Carl E. Larson, Hiroshi Ito, Gregory Breyta, Kikue Burnham, Hoa D. Truong, P. Lawson, and Robert D. Allen "Characterization of new aromatic polymers for 157-nm photoresist applications", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001);

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