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24 August 2001 Creation of low-molecular-weight organic resists for nanometer lithography
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Abstract
Several amorphous molecular materials that function as positive or negative electron-beam resists, to which we refer as molecular resists, have been created. They include 1,3,5-tris[4-(4-toluenesulfonyloxy)phenyl]benzene (TsOTPB), 1,3,5-tris[4-(tert-butoxycarbonylmethoxy)phenyl]benzene (BCMTPB), 4,4',4'-tris(allylsuccinimido)triphenylamine (ASITPA), 1,3,5-tris[2-(4-vinylphenylcarbonyloxy)phenyl]benzene (o-VCTPB), 1,3,5-tris[3-(4-vinylphenylcarbonyloxy)phenyl]benzene (m-VCTPB), and 1,3,5-tris[4-(4-vinylphenylcarbonyloxy)phenyl]benzene (p-VCTPB). These molecular resists permitted the fabrication of line patterns with a high resolution from 150 to 70 nm on exposure to an electron beam.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshiaki Kadota, Motoko Yoshiiwa, Hiroshi Kageyama, Fujio Wakaya, Kenji Gamo, and Yasuhiko Shirota "Creation of low-molecular-weight organic resists for nanometer lithography", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436812
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