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24 August 2001 Development of resists for thermal flow process applicable to mass production
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There are several methods to form small contact holes which are made by optically optimized conditions including PSM, OAI, high NA system. Those methods were very difficult to print sub-130nm contact holes. To print sub-130nm contact holes, we have developed new photoresists for thermal flow process. They could be classified into crosslinking and non-crosslinking system according to whether it could be crosslinked or not during the baking steps. The crosslinking system was consisted of conventional polyhydroxy styrene-based polymers with an additive for cross-linking reactions and the non-crosslinking system was designed by optimized formulation conditions such as molecular weights (Mw), protecting ratio, the amount of photo acid generators and additives. As a result, we obtained 0.13um resolution with 0.6 um DOF by thermal flow process and effectively controlled the flow rate, 10~15nm/ degree(s)C. Also we achieved vertical 90nm contact holes without any pattern deformation.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yool Kang, Sang-Gyun Woo, Sang-Jun Choi, and Joo-Tae Moon "Development of resists for thermal flow process applicable to mass production", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001);

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