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24 August 2001 Novel high-performance ArF resist for sub-100-nm lithography
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Abstract
We have developed several COMA (Cycloolefin-maleic anhydride) type resists and demonstrated their good lithographic performances, especially in the isolated line. Our resist (DHA-H110) was newly upgraded for the manufacturing of sub-100nm device in terms of bulk slope, LER (Line Edge Roughness), CD Linearity, and matching with substrate to prevent pattern collapse. The chemical structure of base resin was almost unchanged. The bulk slope resulted from high absorbency of the matrix resin was successfully overcome by introducing new additive, S1, which is an agent to remove not only top loss but also footing in the bottom. In real device application, DHA-H110 exhibits better adhesion and smaller LER than acrylate type resists on organic BARC. In addition, it shows superior pattern profile after etch process to acrylate type resists. In this paper, we suggest resist related issues for sub-100nm patterning and present lithographic performances of DHA-H110 in detail.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Geunsu Lee, Cha-Won Koh, Jae Chang Jung, Min-Ho Jung, Keun-Kyu Kong, Jin-Soo Kim, Ki-Soo Shin, Se-Jin Choi, Yang-Sook Kim, Yong-Jun Choi, and Deog-Bae Kim "Novel high-performance ArF resist for sub-100-nm lithography", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436843
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