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24 August 2001 Novel routes toward sub-70-nm contact windows by using new KrF photoresist
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To overcome C/H(contact holes) shrinkage limitation of Resist Flow Process (RFP), we investigated and analyzed the tendency of the shrink bias according to the baking temperature and other process factors. Based on this basic test, we found that the shrink bias for the baking temperature could be modeled on the simple linear function. And also we estimated new Hotplate to improve CD uniformity after the resist flow and evaluated newly developed photoresist (New Resist) for the stable C/H shrinkage. In this study, we could recognize that CD uniformity after the resist flow was very dependent on actual temperature uniformity of Hotplate. Actually New Hotplate, which was superior to normal Hotplate, showed good CD uniformity (16nm) at the strong brink bias(140nm). On the other hand, the C/H shrinkage of New Resist was more stable than those of normal KrF Resists and its C/H profiles could not be severely deformed at even high baking temperature to shrink Sub-70nm C/H from original C/H(200nm). Based on these results, the progressive Resist Flow Process in KrF lithography will be a very robust candidate at even high gigabit generation devices.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jin-Soo Kim, Cha-Won Koh, Geunsu Lee, Jae Chang Jung, and Ki-Soo Shin "Novel routes toward sub-70-nm contact windows by using new KrF photoresist", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001);

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