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24 August 2001 Photolithographic evaluation of deep UV resist materials for mask-making applications
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Abstract
This paper discusses methods used for photoresist selection and etch processing for laser mask patterning tool characterization. A major requirement of a deep ultraviolet (DUV) resist is that is has a storage capability of more than 90 days. This means the material does not have to be coated on demand to deliver exceptional lithographic performance. Process difficulties in the development and implementation of an advanced DUV maskmaking solution and how they are being addressed is also described. The purpose of this paper is to provide a look at the resist, develop, and etch processes being developed at Etec Systems, Inc. for DUV maskmaking applications. Key topics are etch characterization and resist process optimization at 257nm associated with the migration to DUV from i-line manufacturing environments and turning from wafer to mask patterning applications. The paper also shows results of work being done to assess alternative resist chemistries in an attempt to maintain a precoated mask blank option for mask shop use. The paper points out issues to be considered when moving from diazoquinone (DNQ) chemistry to chemically amplified resists (CAR) processing in a mask manufacturing environment.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Warren Montgomery, Alex H. Buxbaum, William Rodrigues, Jeff A. Albelo, and Scott E. Fuller "Photolithographic evaluation of deep UV resist materials for mask-making applications", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436813
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