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14 September 2001 ArF step-and-scan system with 0.75 NA for the 0.10μm node
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Abstract
It is widely expected that 193 nm lithography will be the technology of choice for volume production of the 0.10 micrometer device generation. For this purpose the PAS5500/1100TM Step & Scan system, the second generation ArF tool, was developed. It is based on the PAS5500/900TM, the body of which has been adapted to fit the new 0.75 NA StarlithTM projection optics. This high NA enables mass manufacturing of devices following the 0.10 micrometer design rule. The system features a 10 W 2 kHz ArF laser and the AERIALTM II illuminator that can be equipped with a QUASARTM (multipole) option. In order to minimize wafer processing influences on overlay performance ATHENATM off- axis alignment with phase modulator is implemented. The usage of Reticle Blue Alignment will further improve overlay as well as increase the system stability. In this paper the PAS5500/1100TM system layout is discussed and the first imaging and overlay results are presented. Imaging performance is illustrated by SEM pictures of 0.10 micrometer dense lines, 0.15, 0.13 and 0.12 micrometer dense contact holes, 0.10 micrometer DRAM isolation patterns, image plane deviation and system distortion fingerprints. Alignment reproducibility and single machine overlay results demonstrate the overlay capability.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bert Vleeming, Barbra Heskamp, Hans Bakker, Leon Verstappen, Jo Finders, Jan Stoeten, Rainer Boerret, and Oliver Roempp "ArF step-and-scan system with 0.75 NA for the 0.10μm node", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435761
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