Can DUV take us below 100 nm?

Jo Finders; Louis Jorritsma; Mark Eurlings; Richard Moerman; Henk van Greevenbroek; Jan B.P. van Schoot; Donis G. Flagello; Robert John Socha; Thomas Stammler

doi:10.1117/12.435706

14 September 2001 Can DUV take us below 100 nm?

Jo Finders, Louis Jorritsma, Mark Eurlings, Richard Moerman, Henk van Greevenbroek, Jan B.P. van Schoot, Donis G. Flagello, Robert John Socha, Thomas Stammler

Author Affiliations +

Proceedings Volume 4346, Optical Microlithography XIV; (2001) https://doi.org/10.1117/12.435706
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

Currently, the 130 nm SIA node is being implemented at leading edge semiconductor manufacturing facilities. Previously, this node appeared to be the insertion point for 193 nm lithography. However, it is evident that for the majority of applications 248 nm will be the wavelength of choice. This once again raises the question how far DUV lithography (248 nm) will take us. To investigate this, overlay, imaging and productivity related issues have to be considered. Although these items become more and more linked at low k₁-factors (e.g. overlay and imaging), this paper will focus on some of the imaging related topics.

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Jo Finders, Louis Jorritsma, Mark Eurlings, Richard Moerman, Henk van Greevenbroek, Jan B.P. van Schoot, Donis G. Flagello, Robert John Socha, and Thomas Stammler "Can DUV take us below 100 nm?", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435706

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