Challenges for the 100-nm node

Harry Sewell; Pankaj Raval; Victor F. Bunze

doi:10.1117/12.435685

14 September 2001 Challenges for the 100-nm node

Harry Sewell, Pankaj Raval, Victor F. Bunze

Proceedings Volume 4346, Optical Microlithography XIV; (2001) https://doi.org/10.1117/12.435685
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

As the semiconductor industry accelerates its pace to move to 100-nm lithography node, a shift in exposure wavelength from 248 nm to 193 nm seems to be inevitable. Correspondingly, the change of wavelength and the desire to maintain or improve productivity offers some big challenges that must be resolved in order to continue our march into sub-wavelength optical lithography. This paper discusses a number of challenges that must be addressed, and offers how some of them can be addressed with advanced technology used by full-field catadioptric scanning lithography systems.

Citation Download Citation

Harry Sewell, Pankaj Raval, and Victor F. Bunze "Challenges for the 100-nm node", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435685

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