High-transmission attenuated PSM as a viable optical extension technique

Nishrin Kachwala

doi:10.1117/12.435781

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14 September 2001 High-transmission attenuated PSM as a viable optical extension technique

Nishrin Kachwala

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Proceedings Volume 4346, Optical Microlithography XIV; (2001) https://doi.org/10.1117/12.435781
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

Using transmissions higher than 6% some benefits been demonstrated for gate and contact levels with 248nm lithography (Ref. 1,2,3,4). Dense line/space features benefit most from high transmission with conventional illumination and low coherence was demonstrated with tri-tone (Ref.1). This continues the study of benefits with increasing transmission, on contact features. Reticles were manufactured for 248nm Lithography at 6%, 9% and 18% transmissions without the third layer, chrome. Only one dimensional proximity correction was incorporated in the mask design. Extensive mask metrology for CD control, CD linearity, surface quality, Phase and Transmission control across patterned area was carried out to understand the mask infrastructure capability. Simulation projections were verified by imaging analysis. Through pitch Depth of Focus (DOF) and Exposure latitude (EL) data was collected.

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Nishrin Kachwala "High-transmission attenuated PSM as a viable optical extension technique", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435781

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