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14 September 2001 Long-run-time performance characteristics of a line-selected 2-kHz F2 laser for optical microlithography
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Driving optical lithography below the 100nm node is very demanding for optical materials due to the deep ultra-violet radiation to be used. Light sources enabling detailed material studies in the wavelength range of interest are therefore indispensable. For this purpose Gigaphoton Inc. developed a line-selected F2 laser operating at 2kHz which is based on the well proven technology of its KrF and ArF lasers. The F2 laser uses a line-selecting module in order to oscillate at the stronger (157.63nm) of the two F2 transition lines emitted under free running conditions (157.52nm and 157.63nm). The laser transition is not line-narrowed resulting in a deconvoluted bandwidth of 0.92pm (FWHM) with a 95% integrated energy width of 2.95pm. The F2 laser delivers 7.5mJ pulses at 2000Hz with a fluctuation sigma of 3% (50 pulse window). Laser characteristics important for industrial applications and results of durability tests (> 2.5Bpls) will be presented. Discussed laser performance data include laser beam characteristics, especially beam profile and divergence, wavelength and pulse energy stability during gas lifetime cycles as well as the overall laser performance and reliability during a laser-chamber lifetime cycle.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Georg Soumagne, Shinji Nagai, Naoto Hisanaga, Shinobu Nanzai, Yoshinori Ochiishi, Ayako Ohbu, Junichi Fujimoto, and Hakaru Mizoguchi "Long-run-time performance characteristics of a line-selected 2-kHz F2 laser for optical microlithography", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001);


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