Optical proximity correction of critical layers in DRAM process of 0.12-um minimum feature size

Yong-Ho Oh; Jai-Cheol Lee; Ki-Chon Park; Chun-Soo Go; Sungwoo Lim

doi:10.1117/12.435699

14 September 2001 Optical proximity correction of critical layers in DRAM process of 0.12-μm minimum feature size

Yong-Ho Oh, Jai-Cheol Lee, Ki-Chon Park, Chun-Soo Go, Sungwoo Lim

Author Affiliations +

Proceedings Volume 4346, Optical Microlithography XIV; (2001) https://doi.org/10.1117/12.435699
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

We studied whether the critical layers of 0.12 micrometer DRAM could be processed with optical lithography techniques assuming ArF excimer laser as a light source. To enhance the aerial image fidelity and process margin, phase shift mask (PSM) patterns as well as binary mask patterns are corrected with in-house developed optical proximity correction (OPC) software. As the result, we found that the aerial image of the critical layers of a DRAM cell with 0.12 micrometer design rule could not be reproduced with binary masks. But, if we use PSM or optical proximity corrected PSM, the fidelity of aerial image, resolution and process margin are so much enhanced that they could be processed with optical lithography.

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Yong-Ho Oh, Jai-Cheol Lee, Ki-Chon Park, Chun-Soo Go, and Sungwoo Lim "Optical proximity correction of critical layers in DRAM process of 0.12-μm minimum feature size", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435699

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