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14 September 2001 Random pattern formation by attenuated non-phase-shift assist pattern mask
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Abstract
A novel resolution enhancement technology (RET) for random pattern formation which utilizes attenuating non-phase-shift (Atten-NPS) assist pattern is proposed based on optical image calculation. By addition of Atten NPS assist pattern whose size is comparable to that of main pattern, much improvement of imaging characteristics is obtained for isolated feature under modified illumination. Modified illumination is optimized both for hole and line pattern. Also, transmission of Atten-NPS aperture is optimized to enhance imaging characteristics and not to be printed on resist. In the application of this RET, aperture size of assist pattern on mask can make similar to that of main pattern. Consequently, difficulty in mask fabrication for conventional assist pattern method , such as pattern delineation and defect inspection, will be overcome.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shuji Nakao, Akira Tokui, Kouichirou Tsujita, Ichiriou Arimoto, and Wataru Wakamiya "Random pattern formation by attenuated non-phase-shift assist pattern mask", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435777
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