Simulation of exposure process in complex nonplanar 2D/3D resist-substrate structures

Vadim Manuylov; Misha Temkin

doi:10.1117/12.435692

14 September 2001 Simulation of exposure process in complex nonplanar 2D/3D resist-substrate structures

Vadim Manuylov, Misha Temkin

Proceedings Volume 4346, Optical Microlithography XIV; (2001) https://doi.org/10.1117/12.435692
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

Predictive and efficient lithography simulation is an important component of the semiconductor industry efforts to develop the next generation of deep submicron technologies. Emerging technologies are based on elements with very small feature sizes and extremely complex and nonplanar topographies. Therefore lithography processing has to provide high resolution with large depth of focus. Simultaneously such effects as nonplanar reflections and notching as well as refractive index dependence on local absorbed dose are very critical for printing small mask elements using short wavelength radiation. This work presents a new approach for simulating the exposure process that takes into account these effects in complex nonplanar 2D/3D resist-substrate structures. Because the method is very general it can be used for different types of radiation (UV, EUV, X-ray) as well as for multiexposure processes and multilayer and nonlinear resists. Complete exposure simulations for a typical 2D structure take 2-20 sec on a Sun Ultra-10 workstation while 3D simulations may take from 0.5 to 30 minutes.

Citation Download Citation

Vadim Manuylov and Misha Temkin "Simulation of exposure process in complex nonplanar 2D/3D resist-substrate structures", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435692

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KEYWORDS

Interfaces

Refractive index

Radio propagation

Reflection

Beam propagation method

Computer simulations

Lithography

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