UV cleaning of contaminated 157-nm reticles

Theodore M. Bloomstein; Vladimir Liberman; Mordechai Rothschild; N. N. Efremow Jr.; D. E. Hardy; Stephen T. Palmacci

doi:10.1117/12.435764

14 September 2001 UV cleaning of contaminated 157-nm reticles

Theodore M. Bloomstein, Vladimir Liberman, Mordechai Rothschild, N. N. Efremow Jr., D. E. Hardy, Stephen T. Palmacci

Proceedings Volume 4346, Optical Microlithography XIV; (2001) https://doi.org/10.1117/12.435764
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

A UV-lamp-based cleaning station, serving as a load-lock to a VUV spectrometer, has been used to evaluate the cleaning of hydrocarbon residues on 157-nm reticles. UV lamp based cleaning is found to be an effective tool to remove both nanometer scale layers of physisorbed and significantly more resilient highly conjugated 'graphitized' layers on the mask substrate. Slight changes in reflectance and surface roughness are observed on the chromium absorber indicating some degree of photo-oxidation is occurring during lamp cleaning.

Citation Download Citation

Theodore M. Bloomstein, Vladimir Liberman, Mordechai Rothschild, N. N. Efremow Jr., D. E. Hardy, and Stephen T. Palmacci "UV cleaning of contaminated 157-nm reticles", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435764

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