Ablation of amorphous SiO2 using ArF excimer laser

Koichi Awazu

doi:10.1117/12.425011

12 April 2001 Ablation of amorphous SiO₂ using ArF excimer laser

Koichi Awazu

Proceedings Volume 4347, Laser-Induced Damage in Optical Materials: 2000; (2001) https://doi.org/10.1117/12.425011
Event: Laser-Induced Damage in Optical Materials: 2000, 2000, Boulder, CO, United States

Abstract

Ablation from amorphous SiO₂ (silica glass) was induced using ArF excimer laser. Threshold fluences of 2.5 J/cm² was apparently necessary to commence ablation by a single pulse. Ablation was also observed after the number of pulses at below the threshold fluence. Microscopic structural change was examined with x-ray photoelectron spectroscopy, Raman spectroscopy, optical absorption spectroscopy in vacuum ultraviolet (vuv) region. A regular puckered four membered ring as well as Si³⁺ structure were introduced with irradiation. Repeat of flash heating and quenching by the pulse laser irradiation might generate regular puckered four membered rings and Si³⁺ species in silica glass. Increase of Si³⁺ concentration would reduce threshold fluence and number of pulse for ablation.

Citation Download Citation

Koichi Awazu "Ablation of amorphous SiO₂ using ArF excimer laser", Proc. SPIE 4347, Laser-Induced Damage in Optical Materials: 2000, (12 April 2001); https://doi.org/10.1117/12.425011

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