Study of mask aerial images to predict CD proximity and line end shortening of resist patterns

Mircea V. Dusa; Judith van Praagh; Andrew Ridley; Bo So

doi:10.1117/12.425089

9 April 2001 Study of mask aerial images to predict CD proximity and line end shortening of resist patterns

Mircea V. Dusa, Judith van Praagh, Andrew Ridley, Bo So

Proceedings Volume 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2001) https://doi.org/10.1117/12.425089
Event: 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2000, Munich, Germany

Abstract

For low-k1 optical lithography, mask effects are more significant than ever before. Also, at low-k1 lithography, mask type, reticle enhancements and exposure illumination conditions interact in a non-linear way, which makes difficult to predict lithography capability from analysis of simulated aerial images. However, it is worth to try using accurate aerial images for prediction of lithography capability, than exposing wafers on today's expensive lithography tools that are used 24 hour a day for production. This paper proposes a method to predict capability of lithography process from measuring mask effects based on the aerial images gathered at NA and coherence settings similar to real exposure conditions and comparing them to printed patterns in resist.

Citation Download Citation

Mircea V. Dusa, Judith van Praagh, Andrew Ridley, and Bo So "Study of mask aerial images to predict CD proximity and line end shortening of resist patterns", Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); https://doi.org/10.1117/12.425089

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