Translator Disclaimer
Paper
22 February 2001 2X64 linear LWIR arrays based in HgCdTe MBE-grown layers and CCD silicon readouts
Author Affiliations +
Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417805
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
Two X sixty-four linear photodiode arrays on the base of HgCdTe MBE grown layers with CCD silicon readouts were designed, fabricated and tested. It is shown that detectivity for the given arrays even with skimming mode used for long integration times that is need for large square n-p-junctions used and cut-off wavelength of 12.2 micrometer was near the ultimate performance limit.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir V. Vasilyev, Sergey A. Dvoretsky, Dmitrii G. Esaev, T. I. Zahariash, Anatoly G. Klimenko, V. N. Obsyuk, Yuri G. Sidorov, Fiodor F. Sizov, Vladimir P. Reva, Yurii P. Derkach, Sergey G. Korinets, Alexandr G. Golenkov, Sergey D. Darchuk, and Vyacheslav V. Zabudsky "2X64 linear LWIR arrays based in HgCdTe MBE-grown layers and CCD silicon readouts", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417805
PROCEEDINGS
5 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Noise measurements of HgCdTe LWIR arrays with CCD readouts
Proceedings of SPIE (December 05 2002)
Advanced MCT technologies in France
Proceedings of SPIE (May 14 2007)
480 x 2 hybrid HgCdTe infrared focal plane arrays
Proceedings of SPIE (October 17 1994)
MCT linear arrays and associated silicon readouts
Proceedings of SPIE (February 19 2004)
HgCdTe infrared linear arrays for 3 5 and 8...
Proceedings of SPIE (November 03 1995)

Back to Top