4-um negative luminescence from p-InAsSbP/n-InAs diodes in the temperature range of 20 to 180 degrees C

M. Aidaraliev; Nonna V. Zotova; Sergey A. Karandashev; Boris A. Matveev; Maxim A. Remennyi; Nikolai M. Stus'; Georgii N. Talalakin; Volodymyr K. Malyutenko; Oleg Yu. Malyutenko

doi:10.1117/12.417777

22 February 2001 4-μm negative luminescence from p-InAsSbP/n-InAs diodes in the temperature range of 20 to 180 degrees C

M. Aidaraliev, Nonna V. Zotova, Sergey A. Karandashev, Boris A. Matveev, Maxim A. Remennyi, Nikolai M. Stus', Georgii N. Talalakin, Volodymyr K. Malyutenko, Oleg Yu. Malyutenko

Author Affiliations +

Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417777
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine

Abstract

Negative luminescence (NL) operation at approximately 4 micrometer is reported for p-InAsSbP/n-InAs reverse biased diodes with efficiency of about 60% (180 degrees Celsius). High NL conversion efficiency (25 mWcm^-2A^-1, 180 degrees Celsius) and remarkable value of negative apparent temperature ((Delta) T approximately equals -6 degrees Celsius) show advantages of p-InAsSbP/n-InAs NL devices for high temperature applications.

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M. Aidaraliev, Nonna V. Zotova, Sergey A. Karandashev, Boris A. Matveev, Maxim A. Remennyi, Nikolai M. Stus', Georgii N. Talalakin, Volodymyr K. Malyutenko, and Oleg Yu. Malyutenko "4-μm negative luminescence from p-InAsSbP/n-InAs diodes in the temperature range of 20 to 180 degrees C", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417777

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