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22 February 2001 IR photodetector arrays based on HgCdTe films and GaAs/AlGaAs multiquantum wells
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Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417773
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
A technology was designed and the photodetector modules were manufactured for the 3 - 5 and 8 - 12 micrometer spectral range based on the Hg1-xCdxTe/GaAs heterostructures and GaAs/AlGaAs multiquantum well structures grown by the molecular beam epitaxy method. The photosensitive HgCdTe layers were grown on the GaAs substrates with the intermediate buffer layer of CdZnTe. To decrease the surface influence on the recombination processes graded gap HgCdTe layers with the increased to the surface composition were grown. A silicon multiplexer was designed and manufactured on the CMOS/CCD technology with frame rate 50 Hz. Hybrid assembly of the photodetectors array and the multiplexer was produced by the group cold welding on the indium bumps with control of the connection process. The manufactured 128 X 128 FPAs on the HgCdTe with the cut-off wavelength 6 micrometer and 8.7 micrometer had the NEDT value 0.02 K and 0.032 K, correspondingly, at operating temperature 78 K and frame rate 50 Hz. The photosensitive GaAs/AlGaAs multiquantum well structures were manufactured by the MBE method. It is shown that the designed technology allows to produce 128 X 128 photodetector arrays ((lambda) max equals 8 micrometer) with the NEDT value 0.021 K and 0.06 K at operating temperature 54 K and 65 K, correspondingly.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Victor N. Ovsyuk, Yuri G. Sidorov, Vladimir V. Vasilyev, and Valerii V. Shashkin "IR photodetector arrays based on HgCdTe films and GaAs/AlGaAs multiquantum wells", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417773
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