Determination of hole diffusion length in n-InSb at 80 K

Bo-Liang Chen; Yueqing Zhang; Xiaoming Fang; Juncao Lin

doi:10.1117/12.445309

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10 October 2001 Determination of hole diffusion length in n-InSb at 80 K

Bo-Liang Chen, Yueqing Zhang, Xiaoming Fang, Juncao Lin

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Proceedings Volume 4369, Infrared Technology and Applications XXVII; (2001) https://doi.org/10.1117/12.445309
Event: Aerospace/Defense Sensing, Simulation, and Controls, 2001, Orlando, FL, United States

Abstract

Characterization of variable area InSb photodiode arrays as well as electron beam induced current (EBIC) measurements of InSb p-n junction have been carried out. The lateral collection length of the diode was deduced to be 35-38 μm for InSb substrate with electron concentration of 0.5 - 1x10¹⁵ cm^-3. EBIC linescans of the diode cross- section yielded same values. Simulations of EBIC profiles of plan view scans at different electron beam voltages across the diode edge yielded diffusion length of 32-38 μm for different diodes. These results show that for FPA design and fabrication the reasonable value of diffusion length in n-InSb at 80 K should be 32-38μm.

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Bo-Liang Chen, Yueqing Zhang, Xiaoming Fang, and Juncao Lin "Determination of hole diffusion length in n-InSb at 80 K", Proc. SPIE 4369, Infrared Technology and Applications XXVII, (10 October 2001); https://doi.org/10.1117/12.445309

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