Submicrometer Interdigital Silicon Detectors For The Measurement Of Picosecond Optical Pulses

R. J. Phelan; D. R. Larson; N. V. Frederick; D. L. Franzen

doi:10.1117/12.966099

28 November 1983 Submicrometer Interdigital Silicon Detectors For The Measurement Of Picosecond Optical Pulses

R. J. Phelan, D. R. Larson, N. V. Frederick, D. L. Franzen

Proceedings Volume 0439, Picosecond Optoelectronics; (1983) https://doi.org/10.1117/12.966099
Event: 27th Annual Technical Symposium, 1983, San Diego, United States

Abstract

Interdigital silicon Schottky barrier diodes have been evaluated for picosecond pulse measurements. Structures with clearly defined receiving apertures and submicrometer contact spacings were created with electron beam lithography. The detectors exhibit saturation currents corresponding to the absorbed optical power. Impulse response widths were less than 50 ps, and response maps yielded uniform patterns. A peak quantum efficiency of over 30 percent was obtained, and the usable spectral responsivity extends beyond 2 μm.

Citation Download Citation

R. J. Phelan, D. R. Larson, N. V. Frederick, and D. L. Franzen "Submicrometer Interdigital Silicon Detectors For The Measurement Of Picosecond Optical Pulses", Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); https://doi.org/10.1117/12.966099

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