Precise interferometric measurements at single-crystal silicon yielding thermal expansion coefficients from 12 deg to 28 degC and compressibility

Rene Schoedel; Gerhard Boensch

doi:10.1117/12.445624

22 October 2001 Precise interferometric measurements at single-crystal silicon yielding thermal expansion coefficients from 12° to 28°C and compressibility

Rene Schoedel, Gerhard Boensch

Author Affiliations +

Proceedings Volume 4401, Recent Developments in Traceable Dimensional Measurements; (2001) https://doi.org/10.1117/12.445624
Event: Lasers in Metrology and Art Conservation, 2001, Munich, Germany

Abstract

Interferometrically measured length changes of a silicon gauge block were performed under well defined environmental conditions. Special efforts - described in this paper - were made to reduce the uncertainties of the measurements. The used silicon crystal is of high purity and dislocation free. Expansion coefficients were obtained from thermal induced length changes in the range from 12 degrees C to 28 degrees C with uncertainties from about 0.01 percent to 0.03 percent. This corresponds to an uncertainty reduction by a factor of ten compared with earlier studies in this temperature range. The length change of the silicon gauge block induced by pressure variations from vacuum to atmospheric pressure provides a value for the compressibility of crystalline silicon with an uncertainty of about 1.5 percent. This directly measured compressibility slightly differs from literature data obtained from indirect measurements via ultrasonic wave velocities. The possible nature of this deviation is briefly discussed.

Citation Download Citation

Rene Schoedel and Gerhard Boensch "Precise interferometric measurements at single-crystal silicon yielding thermal expansion coefficients from 12° to 28°C and compressibility", Proc. SPIE 4401, Recent Developments in Traceable Dimensional Measurements, (22 October 2001); https://doi.org/10.1117/12.445624

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