Comparison of simulation approaches for chemically amplified resists

Andreas Erdmann; Wolfgang Henke; Stewart A. Robertson; Ernst Richter; Bernd Tollkuehn; Wolfgang Hoppe

doi:10.1117/12.425196

26 April 2001 Comparison of simulation approaches for chemically amplified resists

Andreas Erdmann, Wolfgang Henke, Stewart A. Robertson, Ernst Richter, Bernd Tollkuehn, Wolfgang Hoppe

Proceedings Volume 4404, Lithography for Semiconductor Manufacturing II; (2001) https://doi.org/10.1117/12.425196
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

Lithography simulators have become a standard tool in industrial and governmental research and development departments. IN contrast to the modeling approaches for the optical system and for the lithographic performance of i- line resists, there is still no consensus on the modeling of chemically amplified resist (CAR). Existing models differ in the description of the kinetics and the diffusion phenomena during post exposure bake and in the specification of the development rate. A modeling approach was established, that combines the light induced generation of photoacid, in- and out-diffusion of acid or base components, a generalized deprotection kinetics, Fickian and non-Fickian diffusion of resist components and an arbitrary development rate model. Existing models such as the effective acid model and a standard deprotection model for CAR can be considered as special cases of the implemented model. To evaluate the importance of certain options of the model and of the model parameters we have evaluated the performance of the model by comparing simulated CD data and resists profiles with experimental data.

Citation Download Citation

Andreas Erdmann, Wolfgang Henke, Stewart A. Robertson, Ernst Richter, Bernd Tollkuehn, and Wolfgang Hoppe "Comparison of simulation approaches for chemically amplified resists", Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); https://doi.org/10.1117/12.425196

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available