Manufacturing considerations for MEEF minimization and process window optimization for 180-nm contact holes

Doris Kang; Stewart A. Robertson; Michael T. Reilly; Edward K. Pavelchek

doi:10.1117/12.425204

26 April 2001 Manufacturing considerations for MEEF minimization and process window optimization for 180-nm contact holes

Doris Kang, Stewart A. Robertson, Michael T. Reilly, Edward K. Pavelchek

Author Affiliations +

Proceedings Volume 4404, Lithography for Semiconductor Manufacturing II; (2001) https://doi.org/10.1117/12.425204
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

This study examines through simulation the effects of mask bias and illumination settings on the MEEF and process window of 180nm contact holes. Previous work has shown that application of a global mask bias of -40 or -60 nm collectively minimizes MEEF for 180 nm contacts of varying pitches printed simultaneously with binary mask or 6 percent transmittance attenuated phase shifting mask respectively. Simulations in the present work show that in addition to reducing MEEF, negative mask bias lowers sizing energy and reduces sidelobe formation in patterns printed with 6 percent AttPSM. However, increased film loss from dense contacts and slightly reduced process window also result from the use of negative mask bias. These drawbacks can be partly mitigated by optimizing the illumination parameters. Higher (sigma) , higher NA, and shorter wavelength of exposure all reduce or eliminate top loss and increase overall exposure latitude, while higher (sigma) also increases focus latitude at low NA. At higher NA, a tradeoff exists between lower MEEF with negative mask bias and loss of focus latitude with 6 percent AttPSM.

Citation Download Citation

Doris Kang, Stewart A. Robertson, Michael T. Reilly, and Edward K. Pavelchek "Manufacturing considerations for MEEF minimization and process window optimization for 180-nm contact holes", Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); https://doi.org/10.1117/12.425204

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