Toward a universal resist dissolution model for lithography simulation

Stewart A. Robertson; Chris A. Mack; Mark John Maslow

doi:10.1117/12.425197

26 April 2001 Toward a universal resist dissolution model for lithography simulation

Stewart A. Robertson, Chris A. Mack, Mark John Maslow

Proceedings Volume 4404, Lithography for Semiconductor Manufacturing II; (2001) https://doi.org/10.1117/12.425197
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

In lithography simulation dissolution rate equations are used to map development rate to the resist latent image. This work examines the quality of fit of four rate equations to experimental dissolution data for a wide variety of different resists ranging from medium contrast i-line novolak/DNQ materials to the state-of-the-art 248nm and 193nm chemically amplified photoresists. Three of the rate equations are routinely used for modeling: the Mack rate equation, the Enhanced Mack rate equation, and the Notch rate equation. The fourth is the recently developed Enhanced Notch model. Although each class of photoresist can be fitted reasonably well by one of the conventional rate equations, the Enhanced Notch model yields the best fit to the experimental data in all cases.

Citation Download Citation

Stewart A. Robertson, Chris A. Mack, and Mark John Maslow "Toward a universal resist dissolution model for lithography simulation", Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); https://doi.org/10.1117/12.425197

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