Increasing etch uniformity using in-line endpoint systems on complex spacer technology

Danielle K. Kempa; Sandra L. Hyland

doi:10.1117/12.425267

23 April 2001 Increasing etch uniformity using in-line endpoint systems on complex spacer technology

Danielle K. Kempa, Sandra L. Hyland

Proceedings Volume 4406, In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II; (2001) https://doi.org/10.1117/12.425267
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

This paper examines using an optical endpoint system to control over etching of a complex spacer such as the L-shaped spacer. The endpoint detection system (EPD 202) was used to monitor the etch chemistry on the TEL Unity II e plasma etcher. EPD202 monitors the chemistry change at the top tetraethylorthosilicate (TEOS)/nitride interface and the underlying nitride/TEOS interface. Therefore, a plasma change (film change) is detected twice by the EPD202 monitoring system. This optical double endpoint algorithm reduces the possibility of over etching the layers regardless of the incoming film variations. Verification of module improvement using the endpoint algorithm, instead of the time etch, was collected by inline Tencor 1270 TUV measurements and Scanning Electron Microscope (SEM) cross-sections. The EPD202 system improved etch uniformity by 44%, thereby implying an increase in the repeatability of the gate spacer and overall reliability of the product.

Citation Download Citation

Danielle K. Kempa and Sandra L. Hyland "Increasing etch uniformity using in-line endpoint systems on complex spacer technology", Proc. SPIE 4406, In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II, (23 April 2001); https://doi.org/10.1117/12.425267

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