Acid-breakable-resin-based chemical amplification positive resist for 0.1-um-rule reticle fabrication: design and lithographic performance

Sonoko Migitaka; Tadashi Arai; Toshio Sakamizu; Kei Kasuya; Michiaki Hashimoto; Hiroshi Shiraishi

doi:10.1117/12.438351

5 September 2001 Acid-breakable-resin-based chemical amplification positive resist for 0.1-μm-rule reticle fabrication: design and lithographic performance

Sonoko Migitaka, Tadashi Arai, Toshio Sakamizu, Kei Kasuya, Michiaki Hashimoto, Hiroshi Shiraishi

Author Affiliations +

Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438351
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan

Abstract

We have designed a new chemical amplification (CA) positive resist for 0.1micrometers reticle fabrication. This positive resist consists of an acid-generator, an acid-diffusion controller, and an acid-breakable (AB) resin that can be converted to initial polyphenol units by an acid-catalyzed reaction. In the exposed region, main-chain scission of the AB resin matrix produces nearly mono-dispersed fragments (the polyphenol). This complete fragmentation results in an extremely high dissolution rate with an aqueous-base developer (tetramethylammonium hydroxide: 2.38 wt%). The AB resin-based resist enabled fabrication of scum free 0.15micrometers line-and-space patterns on a CrOx plate by using a 50-kV electron-beam reticle writer (HL series). The line- edge roughness of patterns delineated by this resist (<10 nm) was less than half that for previously developed novolak-resin-based CA resists (RE series:>30nm).

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Sonoko Migitaka, Tadashi Arai, Toshio Sakamizu, Kei Kasuya, Michiaki Hashimoto, and Hiroshi Shiraishi "Acid-breakable-resin-based chemical amplification positive resist for 0.1-μm-rule reticle fabrication: design and lithographic performance", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); https://doi.org/10.1117/12.438351

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