Defect printability study with programmed defects on halftone reticles

Wolfgang Dettmann; Henning Haffner; Jan P. Heumann; Roman Liebe; R. Ludwig; R. Moses

doi:10.1117/12.438398

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5 September 2001 Defect printability study with programmed defects on halftone reticles

Wolfgang Dettmann, Henning Haffner, Jan P. Heumann, Roman Liebe, R. Ludwig, R. Moses

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Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438398
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan

Abstract

Small structure sizes in the order of half the exposure wavelengths on wafers are nowadays accomplished with optical enhancement methods. Instead of COG the semi-transparent halfton reticles are used to reach a sufficient process window for the production of smaller memory products at low k1. In the semitransparent halftone material (MoSi) the intensity of the incident light is reduced to 6% and the phase is shifted by half of the wavelength (180 degree(s)). In this study halftone PSM for 248nm and 193nm wavelength with programmed defects of different sizes in lines/spaces (l/s) and brick stone structures were examined. With inspection, repair and print tests valid criteria for critical defect sizes were found. The defects were all analyzed with a Zeiss Aerial Image Measurement System (AIMS) and characterized with a mask SEM. Several defects were repaired using a FIB. Finally, this halftone PSM was printed and the defects were analyzed by a wafer SEM. The sizes of the programmed defects were distributed from printing to not printing. Critical defect sizes were clearly defined and the sensitivity of inspection tools for photomasks (KLA and Orbot Aris-i) could be checked.

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Wolfgang Dettmann, Henning Haffner, Jan P. Heumann, Roman Liebe, R. Ludwig, and R. Moses "Defect printability study with programmed defects on halftone reticles", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); https://doi.org/10.1117/12.438398

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