Effect of clear field ratio on critical dimension in the dry etching process

Chul-Joong Lee; Hyun-Suk Bang; J. W. Choi; H. S. Jung; Cheol Shin; Hong-Seok Kim

doi:10.1117/12.438357

5 September 2001 Effect of clear field ratio on critical dimension in the dry etching process

Chul-Joong Lee, Hyun-Suk Bang, J. W. Choi, H. S. Jung, Cheol Shin, Hong-Seok Kim

Author Affiliations +

Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438357
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan

Abstract

To improve the resolution and fidelity of the small size patterns as device nodes less than 0.18micrometers , mask makers is required to apply dry etch process. But with applying this process we would experience some problems which aren't happened on wet etching process like small-circled chrome defects, CD Mean to Target variation according to Clear Field Ratio and so on. Of all these barriers this paper is willing to handle with the desired CD Mean to Target control against Clear Field Ratio. In not only mask making but wafers the CD control is one of the most important factors to get good devices. With understanding of CD variation on Clean Field Ratio on each layers it can help for us to estimate macro loading effect and improve CD MTT by adjusting dose accurately or the desired develop recipes before dry etching application for high-end devices.

Citation Download Citation

Chul-Joong Lee, Hyun-Suk Bang, J. W. Choi, H. S. Jung, Cheol Shin, and Hong-Seok Kim "Effect of clear field ratio on critical dimension in the dry etching process", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); https://doi.org/10.1117/12.438357

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