Impact of embedded DRAM logic devices on semiconductor manufacturing

Teruo Hirayama; T. Ezaki; N. Ouchi

doi:10.1117/12.438339

5 September 2001 Impact of embedded DRAM logic devices on semiconductor manufacturing

Teruo Hirayama, T. Ezaki, N. Ouchi

Author Affiliations +

Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438339
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan

Abstract

We have taken the lead in process development, while recognizing the technical difficulties inherent in system solutions involving embedded memory. We have developed processes that integrate a high-speed logic with a large-scale DRAM, with the aim of giving even further distinctiveness to our solutions. In this way, we have successfully realized high-performance system LSIs. Through doing so, we have also realized wide bandwidths, low power consumption rates, and other unique capabilities. Nevertheless, we do not consider the merging method to be the be-all, end-all solution for realizing all types of system LSIs. Rather, we fully realize the need for selection of the optimal process, and incorporate within our vision package development as based on circuit scale, required capabilities, and total costs.

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Teruo Hirayama, T. Ezaki, and N. Ouchi "Impact of embedded DRAM logic devices on semiconductor manufacturing", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); https://doi.org/10.1117/12.438339

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